Pushing boundaries in ultrafast magnetization switching
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Pushing boundaries in ultrafast magnetization switching


A single ultrashort laser pulse can change the magnetization of a suitable material. But even within a magnetic film of just a few nanometer thickness, this process is not homogeneous, but proceeds with a speed of about 2000 meters per second.

The field of ultrafast magnetism explores how flashes of light can manipulate a material’s magnetization in trillionths of a second. In the process called all-optical switching (AOS), a single laser pulse of several femtoseconds (≈10-15 seconds) duration flips tiny magnetic regions without the need for an externally applied magnetic field. Enabling such an ultrafast control over magnetization, orders of magnitude faster than what can be achieved using a conventional magnet-based read/write head as in a magnetic hard drive, AOS is a promising candidate for novel spintronics devices that use magnetic spins with their associated magnetic moments as information carriers. Such devices typically consist of a stack of nanometer-thin materials, with the actual magnetic material being one of them.

Until now, the switching process was thought to happen uniformly in the magnetic material wherever the laser pulse deposits a sufficient amount of energy. In a study recently published in Nature Communications, researchers from the Max Born Institute together with collaborators from Berlin and Nancy revealed that this is not the case. Instead, there is an ultrafast propagation of a magnetization boundary into the depth of the material.

Combining ultrashort infrared (IR) excitation with table-top femtosecond soft-X-ray spectroscopy (see Fig. 1), the scientists studied an only 9.4 nm thin gadolinium-cobalt (GdCo) film in a typical stack with platinum and copper layers on top and a tantalum layer below. Using broadband X-rays tuned to an atomic resonance of the rare earth atom Gd, they applied a technique recently developed at MBI that allows following magnetization changes along the depth of the sample in time. The result is a movie of the magnetization as it evolves along the film’s depth, with femtosecond temporal resolution.

In this movie, the researchers could observe what had been hidden so far: Immediately after the arrival of the infrared pulse of 27 fs duration, the entire GdCo layer first heats up and its magnetization drops nearly uniformly, in line with the conventional thinking. But after two picoseconds, two domains of opposite magnetization appear: the top region-receiving an additional stimulus from the more strongly heated up platinum layer on top of the GdCo—flips first, while the magnetization direction at the bottom remains unchanged. A boundary between these two domains is formed and subsequently propagates downward at about 2,000 m/s, sweeping through the entire GdCo layer in roughly 4.5 ps (see Fig. 2). In particular, only the surface-near slice of the GdCo is initially excited strong enough to overcome the threshold required for AOS; nevertheless, the switching succeeds as the rest of the film follows due to the propagating boundary.

This discovery forces a rethink of AOS as a combination of local and non-local processes, challenging the current understanding of the process by the established theoretical models. The moving boundary, possibly driven by a combination of angular-momentum exchange between the switched and unswitched regions and the thermal gradients across the heterostructure established on an ultrashort time scale, ultimately determines both the switching speed and the final magnetic state.

Looking forward, these insights open new routes to engineer light-actuated magnetic devices. By choosing different surrounding layers in addition to altering film thickness and composition, one can control where the boundary nucleates and how fast it travels. Such design freedom could enable fast and energy-efficient memory and logic elements that exploit light-driven magnetization reversal.

Original publication
Transient domain boundary drives ultrafast magnetisation reversal

Martin Hennecke,Daniel Schick, Themistoklis P. H. Sidiropoulos, Jun-Xiao Lin, Zongxia Guo, Grégory Malinowski, Maximilian Mattern, Lutz Ehrentraut, Martin Schmidbauer, Matthias Schnuerer,Clemens von Korff Schmising, Stéphane Mangin, Michel Hehn, Stefan Eisebitt
Nature Communications 16, 8233 (2025)
https://www.nature.com/articles/s41467-025-63571-3
Archivos adjuntos
  • Fig.1: Schematic illustration of the experimental approach. The magnetic heterostructure is first excited by a femtosecond infrared laser pulse (2.1µm wavelength), initiating the process of all-optical magnetization switching. A second soft X-ray pulse probes the magnetization after a variable amount of time. The spectrum of the soft X-rays reflected by the sample is then recorded using a spectrometer consisting of an optical grating and a CCD camera. Credits: MBI
  • Fig.2: Magnetization switching of the 9.4 nm thin GdCo layer. The graph depicts the cross-section of a Pt/Cu/GdCo/Ta heterostructure and shows how the magnetization (false color scale) evolves over time (x-axis) and along the depth (y-axis). The ultrafast dynamics are set off by an intense laser pulse hitting the heterostructure from at the top of the Pt layer at 0 ps delay. This leads to the initial magnetization (red color) being reduced until it reaches zero at the top of the GdCo film, where a region of reversed magnetization (blue color) starts to evolve. Subsequently, the GdCo layer gets divided along its depth into two magnetic domains with opposite magnetization direction. Within a few picoseconds, the reversed region grows over the entire GdCo layer, shifting the boundary between the two domains (white color) into the depth of the film.
Regions: Europe, Germany
Keywords: Science, Physics

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