High-Sensitive DUV-SWIR Broadband Photodetectors
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High-Sensitive DUV-SWIR Broadband Photodetectors


As key optoelectronic components, photodetectors with deep-ultraviolet (DUV) to visible (Vis) to short-wavelength infrared (SWIR) full-spectral response play a critical role in daily life. Typically, commercial full-spectrum photodetectors are mainly based on conventional semiconductor materials. However, these photodetectors require complex evaporation-based fabrication processes and exhibit relatively high dark currents and noise levels under operation. At present, the most mature approach to realize DUV-Vis-SWIR full-spectrum photodetectors relies on the high integration of UV photodetectors with Vis-SWIR photodetectors. Nonetheless, issues such as system size, cost, and the mismatch in responsivity between different types of photodetectors hinder further commercial application. Therefore, the exploration and development of high-sensitivity DUV-SWIR photodetectors has become one of the current research hotspots.
To address the challenge that a single device can hardly achieve continuous detection from DUV to SWIR, the research team led by Professor Bin Dong from Dalian Minzu University proposed the construction of a perovskite/In0.47Ga0.53As thin-film heterojunction, thereby realizing broadband photodetectors covering DUV to SWIR (300–1700 nm). To overcome the problems of numerous surface and bulk defects as well as poor stability in conventional lead halide perovskites, the team systematically compared the coordination ability of hydroxyl/carbonyl groups toward Pb2+ using four natural flavonoid derivatives (flavone, 3-hydroxyflavone, kaempferol, and quercetin (QC)). The study was made available online on June 07, 2026, in the journal Opto-Electronic Advances.
Through density functional theory calculations of defect formation energies, Kelvin probe force microscopy, ultraviolet photoelectron spectroscopy, and other optoelectronic characterization techniques, they revealed that QC, owing to its most uniform distribution of multiple acidic hydroxyl groups, can form three stable chelate rings to achieve an optimal “locking” effect on Pb2+. Meanwhile, optoelectronic performance tests on the perovskite films demonstrated that the QC-modified material exhibited the best charge transport characteristics and high long-term operational stability. Subsequently, the modified perovskite film was highly integrated with an In0.47Ga0.53As layer, achieving high-sensitivity and high-stability broadband photodetection. Measurements showed that the broadband detector retained over 98.9% of its initial performance after 30,000 consecutive ON/OFF cycles, demonstrating excellent potential for commercial applications. Furthermore, by fabricating a photodetector imaging array based on the QC-modified perovskite/In0.47Ga0.53As heterojunction, the team achieved high-sensitivity multispectral imaging from DUV to SWIR.


Reference
Title of original paper: Highly sensitive DUV-SWIR photodetectors by natural flavonoid-derivative isomers through a multisite chelation strategy
Journal: Opto-Electronic Science
DOI: https://doi.org/10.29026/oes.2026.260014

Ding, N., Li, D., Yao, M., Liu, Y., Liu, H., Fang, G., Zhu, G., Li, X., Xu, W., & Dong, B. (2026). Highly sensitive DUV-SWIR photodetectors by natural flavonoid-derivative isomers through a multisite chelation strategy. Opto-Electronic Science, 5(6), 260014. https://doi.org/10.29026/oes.2026.260014
Angehängte Dokumente
  • (a) Schematic illustration of the fabrication process of the heterojunction imaging array; (b-d) Schematic diagram, photograph, and data processing of multispectral object imaging; (e-h) Images of the iron wire inside a capsule captured by the 8×8 pixel array under illumination at 365 nm (UV), 520 nm (visible), 980 nm (NIR), and 1540 nm (SWIR); (i) Pixel-level image fusion process demonstrating complementary multispectral information.
  • Prof. Bin Dong is the Chief Scientist of a National Key Research and Development Program of China and a Professor of the Changjiang Scholars Program of the Ministry of Education.
  • Prof. Wen Xu is a Professor of the School of Physics and Materials Engineering of Dalian Minzu University, and the National Natural Science Foundation of China’s Excellent Young Scientist Fund.
Regions: Asia, India
Keywords: Applied science, Nanotechnology, Science, Chemistry, Life Sciences, Physics

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